This document is a technical datasheet for the Mitsubishi Electric 2SC1324, an NPN epitaxial planar type RF power transistor. It is specifically designed for industrial use in broadband amplifiers operating from the VHF to UHF frequency bands.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance data including graphs for collector dissipation, breakdown voltages, current gain, noise figure, and third-order intermodulation distortion.
| Type | NPN Epitaxial Planar Type |
|---|---|
| Application Band | VHF to UHF |
| Collector Current (Max) | 150 mA |
| Collector Dissipation (Ta=28°C) | 3 W |
| Junction Temperature (Max) | 175 °C |
It uses a TO-12 metal sealed package with a case grounded pin.
The absolute maximum rating for collector to emitter voltage is 25 V.
The test conditions are Vce=15V and Ig=30mA.