FS3UM-18A is a Nch power MOSFET produced by Mitsubishi. Its maximum drain-source voltage is 900V, maximum on-resistance is 4.0 ohms, and maximum drain current is 3A. This device is suitable for SMPS, DC-DC converters, battery chargers, printers, copiers, HDD, FDD, TV, VCR, personal computers and other applications.
This document is a technical datasheet for the Mitsubishi Electric FS3UM-18A N-channel Power MOSFET. It outlines the device's physical dimensions, intended applications such as SMPS and DC-DC converters, and provides comprehensive electrical specifications.
The datasheet includes maximum ratings like a drain-source voltage of 900V and a continuous drain current of 3A. It also presents detailed electrical characteristics including threshold voltage, on-state resistance, capacitance values, and switching times under specific test conditions.
| Drain-source voltage (Vbss) | 900 V |
|---|---|
| Gate-source voltage (Vass) | +30 V |
| Drain current (ID) | 3 A |
| Maximum power dissipation (Pp) | 100 W |
| Channel temperature range | -55 ~ +150 °C |
| Input capacitance (Ciss) | 770 pF |
The maximum continuous drain current rating is 3 A.
The device can dissipate up to 100 W when the channel temperature is 25°C.
Both the channel temperature and storage temperature range from -55 to +150 °C.