The M66258FP is a high-speed line memory that uses high-performance silicon gate CMOS process technology and adopts the FIFO structure consisting of 8192 words x 8 bits. It can independently and asynchronously perform reading and writing operations at different cycles, making it optimal for buffer memory to be used between equipment of different data processing speeds.
The Mitsubishi M66258FP is an 8192 words x 8 bits line memory designed with high-performance silicon gate CMOS process technology. It utilizes a First In First Out (FIFO) structure, allowing reading and writing operations to be performed independently and asynchronously at different cycles.
| Memory Configuration | 8192 words x 8 bits |
|---|---|
| High Speed Cycle (Min.) | 20 ns |
| High Speed Access (Max.) | 16 ns |
| Output Hold (Min.) | 3 ns |
| Supply Voltage (Typ.) | 5.0 V |
| Operating Temperature Range | 0-70 °C |
The M66258FP has a memory configuration of 8192 words x 8 bits.
The device supports a high speed cycle of 20 ns (Min.).
The recommended operating supply voltage ranges from 4.5 V to 5.5 V.