This document describes the features and characteristics of three Cool MOS™ power transistor products: SPP07N60S5, SPB07N60S5, and SPI07N60S5. These include high voltage technology, best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances, and improved transconductance.
This document is a technical datasheet for the Infineon Technologies SPPO7N60S5, SPBO7N60S5, and SPIO7N60S5 Cool MOS Power Transistors. These devices feature a 600V drain-source breakdown voltage and are available in P-TO220-3-1, P-T0263-3-2, and P-TO262 packages.
| Continuous drain current (Tc = 25°C) | 7.3 A |
|---|---|
| Power dissipation (Tc = 25°C) | 83 W |
| Operating temperature range | -55... +150 °C |
The device supports a continuous drain current of 7.3 A when the junction temperature is 25°C.
The component can operate and be stored within a range of -55 to +150 °C.