This document is a technical datasheet for the Sanyo 2SJ276, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a surface mount type package suitable for high-density applications.
| Drain-to-Source Voltage (Vdss) | -100 V |
|---|---|
| Gate-to-Source Voltage (Vgss) | +20 V |
| Drain Current (DC) (Id) | -8 A |
| Allowable Power Dissipation (Pd) | 1.65 W |
| Channel Temperature (Tc) | 150 °C |
| Turn-ON Delay Time | 16 ns |
| Rise Time (tr) | 27 ns |
The device can dissipate up to 1.65 W under specified conditions.
The channel temperature must not exceed 150 °C.
The turn-ON delay time is at least 16 ns and the rise time is at least 27 ns.