This document is a technical datasheet for the SANYO 2SJ275, a P-Channel MOS Silicon Field Effect Transistor (FET). It is designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a surface mount type package that allows for high density applications and reduced manufacturing processes.
| Drain to Source Voltage (Vpss) | -100 V |
|---|---|
| Gate to Source Voltage (Voss) | +/- 15 V |
| Drain Current (DC) (Ip) | -6 A |
| Allowable Power Dissipation (Pp) | 1.65 W |
| Channel Temperature (Tch) | 150 °C |
The device has an allowable power dissipation of 1.65 W at a case temperature of 25°C.
The storage temperature ranges from -55 to +150 °C.
The device supports a pulse drain current of 24 A when the duty cycle is 1%.