This document is a technical datasheet for the SANYO 2SJ337, a P-Channel MOS Silicon Field Effect Transistor (FET). It is designed specifically for very high-speed switching applications. Key features highlighted include low ON resistance, very high-speed switching capabilities, and low-voltage drive requirements.
| Drain-to-Source Voltage (Vdss) | -12 V |
|---|---|
| Gate-to-Source Voltage (Vgss) | +/- 8 V |
| Drain Current (DC) (Ip) | -8 A |
| Allowable Power Dissipation (Pd) | 30 W |
| Channel Temperature (Tch) | 150 °C |
The allowable power dissipation is 30 W when the case temperature is 25°C.
The maximum allowable channel temperature is 150 °C.
The cutoff voltage ranges from -1.0 V to -2.0 V when the drain current is -1 mA.