This document is a datasheet for the SANYO 2SJ274, a P-channel MOS silicon field-effect transistor (FET). It is specifically designed for very high-speed switching applications. Key features include low on-resistance, very high-speed switching capabilities, and low-voltage drive requirements.
| Drain to Source Voltage (Vpss) | -100 V |
|---|---|
| Gate to Source Voltage (Vass) | ±15 V |
| Drain Current (DC) (Ip) | -12 A |
| Allowable Power Dissipation (Pp) | 2.0 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
| Turn-ON Delay Time (ton) | 18 ns |
| Rise Time (tr) | 25 ns |
The absolute maximum rating for allowable power dissipation (Pd) is 2.0 W when the ambient temperature is 25°C.
The turn-ON delay time is a maximum of 18 ns, and the rise time is a maximum of 25 ns.
The breakdown voltage (V(BR)DSS) is a minimum of -100 V when the drain current is -1 mA.