FSS239 is a N-channel silicon MOSFET produced by SANYO. It has the characteristics of low on-resistance and low drive voltage, and is suitable for load switching applications.
This document is a technical datasheet for the SANYO FSS239, an N-Channel Silicon MOSFET designed for load switching applications. Key features include a low on-resistance and compatibility with a 2.5V drive voltage.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, and package dimensions (SOP8). It includes performance graphs such as Rds(on) versus temperature, drain current versus forward voltage, and switching time curves.
| Drain-to-Source Voltage | 20 V |
|---|---|
| Gate-to-Source Voltage | +10 V |
| Channel Temperature | 150 °C |
| Package Type | SOP8 |
The device can dissipate up to 1.8 W when mounted on a ceramic board measuring 1000mm² x 0.8mm.
The MOSFET supports a peak drain current of 52 A when the pulse width is less than 10 microseconds with a 1% duty cycle.
The component can be stored in an environment ranging from -55 to +150 °C.