2SJ339 is a P-channel silicon MOSFET produced by SANYO. It has low on-resistance, ultra-high-speed switching, 4V drive, and mica-free package.
This document is a technical datasheet for the SANYO 2SJ339, a P-Channel Silicon MOSFET designed for ultrahigh-speed switching applications. Key features include low ON resistance, AV drive capability, and a micaless package that facilitates mounting.
The datasheet provides absolute maximum ratings such as a drain-to-source voltage of -60V and a drain current (DC) of 25A. It also details electrical characteristics including input/output capacitance, switching times, and on-state resistance under specific test conditions.
| Drain-to-Source Voltage (Vdss) | -60 V |
|---|---|
| Gate-to-Source Voltage (Vgss) | +20 V |
| Drain Current (DC) (Id) | 25 A |
| Drain Current (Pulse) (IDP) | 100 A |
| Allowable Power Dissipation (Pd) | 40 W |
| Channel Temperature (Tch) | 150 C |
| Storage Temperature (Tstg) | -55 to +150 'C |
| Input Capacitance (Ciss) | 3800 pF |
| Output Capacitance (Coss) | 1200 pF |
| Reverse Transfer Capacitance (Crss) | 300 pF |
The channel temperature is rated up to 150°C and the storage temperature ranges from -55°C to +150°C.
The maximum allowable DC drain current (Id) is 25A.