2SJ316 is a NPN type silicon transistor
This document is a technical datasheet for the SANYO 2SJ316, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low ON resistance, very high-speed switching capabilities, and low-voltage drive requirements.
The datasheet provides comprehensive electrical specifications such as breakdown voltage, leakage current, transfer admittance, and capacitance values measured at 25°C. It also includes graphical data illustrating the relationship between drain current and temperature, as well as switching time characteristics.
| Drain to Source Voltage (Vpss) | -12 V |
|---|---|
| Gate to Source Voltage (Voss) | ±15 V |
| Drain Current (DC) (Ip) | -1 A |
| Allowable Power Dissipation (Pp) | 35 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The allowable power dissipation is 35 W when the case temperature is 25°C.
The cutoff voltage ranges from a minimum of -1.0 V to a maximum of -20 V.