This document describes the features and characteristics of the 2SJ307 product, including supplier information and a free datasheet search website.
This document is a technical datasheet for the SANYO 2SJ307, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive requirements, and a micaless package that facilitates mounting.
The datasheet provides absolute maximum ratings such as a drain to source voltage of -250V and a storage temperature range from -55°C to +150°C. It also details electrical characteristics including breakdown voltages, leakage currents, capacitance values at 1MHz, and switching times like turn-ON delay (24 ns) and rise time (37 ns).
| Drain to Source Voltage (V(BR)DSS) | -250 V |
|---|---|
| Allowable Power Dissipation (Pp) | 20 W |
| Channel Temperature (Tj) | -55 to +150 °C |