2SJ320 is a product of the company. The product is a semiconductor component.
This document is a technical datasheet for the SANYO 2SJ320, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a micaless package that facilitates mounting.
The datasheet provides absolute maximum ratings such as a drain-to-source voltage of 250V and a storage temperature range from -55°C to +150°C. It also lists detailed electrical characteristics including breakdown voltages, capacitance values at 1MHz, and switching times like turn-ON delay (4 ns) and rise time (4 ns).
| Drain-to-Source Voltage (Max) | 250 V |
|---|---|
| Gate-to-Source Voltage (Max) | +30 V |
| Drain Current (DC) (Min) | -4 A |
| Allowable Power Dissipation (Max) | 20 W |
| Channel Temperature (Max) | 150 °C |
| Turn-ON Delay Time (Typ) | 4 ns |
The allowable power dissipation is rated at 20 W.
The device can be stored between -55 and +150 °C.
The device supports a pulse drain current of 16 A.