This document is a technical datasheet for the Sanyo 2SJ257, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a surface mount type package suitable for high-density applications.
| Drain to Source Voltage (Vdss) | -30 V |
|---|---|
| Gate to Source Voltage (Vgs) | ±15 V |
| Drain Current (DC) (Id) | -10 A |
| Allowable Power Dissipation (Pd) | 50 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The allowable power dissipation is 165 W at a temperature of 25°C.
The device can be stored between -55 and +150 °C.
The device supports a pulse drain current of 40 A with a duty cycle of 1%.