This document is a technical datasheet for the Sanyo 2SJ258, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive capability, and a surface mount type package to reduce assembly time and equipment size.
| Drain-to-Source Voltage (Vdss) | -30 V |
|---|---|
| Gate-to-Source Voltage (Vgss) | +20 V |
| Drain Current (DC) (Id) | -12 A |
| Allowable Power Dissipation (Pd) | 1.65 W |
| Channel Temperature (Tc) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The device has an allowable power dissipation of 1.65 W.
The maximum channel temperature is rated at 150 °C.
The device can be stored between -55 to +150 °C.