This document is a technical datasheet for the SANYO 2SJ195, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low ON resistance and low-voltage drive capabilities.
The datasheet provides absolute maximum ratings, electrical characteristics such as breakdown voltages and capacitance values, and performance graphs including output characteristics and switching time versus temperature.
| Drain to Source Voltage (Voss) | -100 V |
|---|---|
| Gate to Source Voltage (Vess) | +/- 15 V |
| Drain Current (DC) (Ip) | -4 A |
| Channel Temperature (Teh) | +150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
| Input Capacitance (Ciss) | 950 pF |
| Turn-ON Delay Time (taion) | 15 ns |
The allowable power dissipation is 30 W when the case temperature is 25°C.
The device supports a maximum DC drain current of -4 A and a pulse drain current of -16 A.
The channel temperature must not exceed 150 °C.