This document is a technical datasheet for the SANYO 2SJ188, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low on-resistance, low-voltage drive capability, and very high-speed switching performance.
The datasheet provides absolute maximum ratings such as a drain to source voltage of -30V and an allowable power dissipation of 20W at 25°C. It also lists detailed electrical characteristics including breakdown voltages, capacitance values (Ciss, Coss, Crss), and switching times like turn-on delay and rise time.
| Drain to Source Voltage (Vdss) | -30 V |
|---|---|
| Gate to Source Voltage (Vgss) | +15 V |
| Drain Current (DC) (Id) | ~2 A |
| Allowable Power Dissipation (Pd) | 20 W |
| Channel Temperature (Tch) | 150 °C |
| Static Drain to Source Resistance (Rds(on)) | 0.2 - 0.3 Ohm |
| Input Capacitance (Ciss) | 400 pF |
The device can dissipate up to 20 W when the case temperature is maintained at 25°C.
The device is rated for a maximum of -30 V between the drain and source, and +15 V between the gate and source.
The MOSFET supports a maximum continuous DC drain current of 2 A.