This document is a technical datasheet for the SANYO 2SJ192, a P-Channel MOS Silicon Field Effect Transistor (FET) designed for very high-speed switching applications. Key features highlighted include low on-resistance, very high-speed switching capabilities, and low-voltage drive requirements.
| Drain to Source Voltage (Vpss) | -60 V |
|---|---|
| Gate to Source Voltage (Vass) | #15 v |
| Drain Current (DC) (Ip) | -4 A |
| Allowable Power Dissipation (Pp) | 30 W |
| Channel Temperature (Tch) | 150 °C |
The allowable power dissipation is 30 W when the case temperature is 25°C.
The device can be stored at temperatures ranging from -55°C to +150°C.