This document is a technical datasheet for the SANYO 2SJ191, a P-Channel MOS Silicon FET. Key features highlighted include low ON resistance, very high-speed switching performance, and suitability for low-voltage drive applications.
The datasheet provides absolute maximum ratings such as a drain to source voltage of -60V and an allowable power dissipation of 20W at 25°C. It also details electrical characteristics including breakdown voltages, leakage currents, capacitance values, and switching times under specific test conditions.
The device features low ON resistance, very high-speed switching, and low-voltage drive capabilities.
The absolute maximum rating for allowable power dissipation is 20 W.
The device can be stored between -55°C and +150°C.
The static drain to source on state resistance is typically 0.45 Ω.