This document is a technical datasheet for the SANYO 2SJ190, a P-channel silicon MOSFET designed for very high-speed switching applications. Key features include low on-resistance and low-voltage drive capabilities.
The datasheet provides absolute maximum ratings, electrical characteristics at 25°C, and typical performance curves for drain current versus voltage and temperature. It also includes package dimensions and a standard disclaimer regarding product usage limitations.
| Application | Very High-Speed Switching Applications |
|---|---|
| Channel Temperature Range | -55 to +150 °C |
Yes, it is designed specifically for very high-speed switching applications.