2SC3070 is a NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier Applications produced by SANYO.
This document is a technical datasheet for the SANYO 2SC3070 NPN epitaxial planar silicon transistor. It details applications such as drivers and muting circuits, highlighting features like high DC current gain (hFE=800 to 3200) and large current capacity (Ic=1.2A).
| Collector Current | 1.2 A |
|---|---|
| Collector-to-Base Voltage | 30 V |
| Collector Current (Pulse) | 2 A |
The absolute maximum rating for continuous collector current (Ic) is 1.2 A.
The transistor can operate with a maximum junction temperature of 150 °C.
The collector dissipation rating is a maximum of 1 W.