This is the PDF datasheet of 2SJ362. It mainly includes the characteristics, parameters and other information of the product.
This document is a technical datasheet for the SANYO 2SJ362, a P-Channel MOS Silicon Field Effect Transistor (FET). It is designed for very high-speed switching applications. Key features highlighted include low ON resistance, very high-speed switching capabilities, and low-voltage drive requirements.
| Drain-to-Source Voltage (Voss) | -60 V |
|---|---|
| Gate-to-Source Voltage (Vass) | ±25 V |
| Drain Current (DC) (Ip) | -2 A |
| Allowable Power Dissipation (Pp) | 20 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The allowable power dissipation is 20 W when the case temperature is 25°C.
The ON-state resistance ranges from a minimum of 300 mΩ to a maximum of 400 mΩ.
The device can be stored between -55°C and +150°C.