This document is a technical datasheet for the SANYO 2SJ193, a P-Channel MOS Silicon FET designed for very high-speed switching applications. Key features include low ON resistance, low-voltage drive requirements, and high speed performance suitable for fast switching circuits.
The datasheet provides absolute maximum ratings such as a drain to source voltage of -100V and an allowable power dissipation of 35W at 25°C. It also lists detailed electrical characteristics including breakdown voltages, leakage currents, capacitances (Ciss, Coss, Crss), and switching times like turn-ON delay and rise time.
| Drain to Source Voltage (Vdss) | -100 V |
|---|---|
| Gate to Source Voltage (Vgss) | -15 V |
| Drain Current (DC) (Id) | -4 A |
| Allowable Power Dissipation (Pd) | 35 W |
| Channel Temperature (Tch) | 150 °C |
| Storage Temperature (Tstg) | -55 to +150 °C |
The allowable power dissipation is 15 W when the device is mounted on a ceramic board.
The maximum drain to source voltage rating is -100 V, and the maximum gate to source voltage rating is ±15 V.
The rise time (tr) is approximately 30 ns, and the fall time (tf) is approximately 70 ns.