IXTP 1R6N50P is a N-Channel Enhancement Mode power MOSFET produced by IXYS. Its main features include international standard packaging, unclamped inductive switching (UIS) rating, low package inductance, easy to drive and protect.
This document provides technical specifications for the IXTP1R6N50P (TO-220) and IXTY1R6N50P (TO-252) N-channel enhancement mode power MOSFETs. Key features include unclamped inductive switching (UIS) ratings, low package inductance for easy driving, and high power density suitable for space-constrained applications.
| Drain-Source Voltage (VDS) | 500 V |
|---|---|
| Continuous Drain Current (ID) | 1.6 A |
| On-Resistance (RDS(on)) | 6.5 Ω |
| Operating Junction Temperature (TJ) | -55 ... +150 °C |
The continuous gate-source voltage is ±30 V, with a transient rating of ±40 V.
The device is available in TO-252 (model IXTY) and TO-220 (model IXTP) packages.