This data sheet provides the maximum ratings, characteristics, characteristics, applications and advantages of the 7P50 and 8P50 P-channel enhancement type avalanche rated standard power MOSFET.
This document is a technical datasheet for the IXYS IXTH 8P50, a P-channel enhancement mode Power MOSFET. The device features an International standard JEDEC TO-247 AD package with low Rds(on) achieved through HDMOS™ process technology and a rugged polysilicon gate cell structure.
| Drain-Source Voltage (Vdss) | -500 V |
|---|---|
| Package Type | TO-247 AD |
| Operating Temperature Range | -55 ... +150 °C |
The maximum lead temperature for soldering is 300°C.
The maximum continuous drain current is -8 A when the temperature is 25°C.
The required mounting torque is 1.1340 N·m (or 10 lb·in).