The document describes the N-channel enhancement mode power MOSFETs of TO-204 AA (IXTM) and TO-247 AD (IXTH) models produced by IXYS. The products feature low RDS(on), rugged polysilicon gate cell structure, and low package inductance. They are suitable for switch-mode and resonant-mode power supplies, motor controls, uninterruptible power supplies, and DC choppers, among other applications.
This document provides a comprehensive technical overview of the IXYS IXTH 6N90 and IXTM 6N90A Power MOSFETs. It details maximum electrical ratings such as drain-source voltage (900 V) and continuous current (6 A), alongside typical operating characteristics like on-resistance and switching times.
| Continuous Drain Current (ID) | 6 A |
|---|---|
| Maximum Power Dissipation (PD) | 180 W |
| Operating Junction Temperature Range | -55 ... +150 °C |
| On-Resistance (IXTH 6N90) | 1.8 Ω |
They are suitable for switch-mode and resonant-mode power supplies, motor controls, UPS systems, and DC choppers.
The recommended mounting torque is 1.13 Nm or 10 lb.in.