MITSUBISHI M5M51016BTP RT-12VL-I -12VLL-I Data Sheet

M5M51016BTP,RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology


MITSUBISHI M5M51016BTP RT-12VL-I -12VLL-I Data Sheet  - cover page
Brand
Mitsubishi
Category
Memory
Document type
Datasheet
Language
English
Pages
8
File format
PDF
File size
55 KB
Published
06 June, 2012
Updated
30 September, 2023
Model
12VLL-I
MD5 checksum
3477F076C76DCD4E92995A9DCF041B2E

About this manual

This document describes the M5M51016BTP and M5M51016BRT, which are 1048576-bit CMOS static RAMs organized as 65536 words by 16 bits. Fabricated using high-performance triple polysilicon CMOS technology with resistive load NMOS cells, these devices offer high density and low power consumption, making them ideal for battery back-up applications.

What's inside

  • Description
  • Features
  • Function
  • Pin Configuration
  • Absolute Maximum Ratings
  • DC Electrical Characteristics
  • AC Electrical Characteristics
  • Timing Diagrams

Specifications

Capacity1048576-bit (65536-word by 16-bit)
TechnologyCMOS Static RAM
Package Type44-pin TSOP (Thin Small Outline Package)
Operating Temperature-40 ~ 85 °C
Supply Voltage (Typ)+3.0V
Access Time (12VL-I)120ns
Stand-by Current (Typ)0.3µA

Frequently asked questions

What is the organization of this RAM?

The device is organized as 65536 words by 16-bit.

Are the outputs directly TTL compatible?

Yes, all inputs and outputs are directly TTL compatible.

Can this RAM be used for battery back-up?

Yes, it is ideal for the battery back-up application due to low stand-by current.

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