The document introduces three models of MITSUBISHI ELECTRIC's dynamic RAM products, which are 67108864-bit (16777216-word x 4-bit), 67108864-bit (8388608-word x 8-bit), and 67108864-bit (4194304-word x 16-bit) fast page mode dynamic RAMs. The products feature low power dissipation, low voltage supply, LVCMOS input level, etc., and are applicable to main memory unit for computers, microcomputer memory, refresh memory for CRT, and other applications.
This document describes the Mitsubishi Electric M5M467400/465400BJ, M5M467800/465800BJ, and M5M465160BJ BTP series of Fast Page Mode Dynamic RAMs. These devices are organized as 67108864-bit (16777216-word by 4-bit), 67108864-bit (8388608-word by 8-bit), or 67108864-bit (4194304-word by 16-bit) dynamic RAMs, respectively. They are fabricated with a high-performance CMOS process and utilize a double-layer aluminum process combined with a single-transistor dynamic storage stacked capacitor cell to provide high circuit density.
| Organization (M5M467400/465400BJ) | 16777216-word by 4-bit |
|---|---|
| Organization (M5M467800/465800BJ) | 8388608-word by 8-bit |
| Organization (M5M465160BJ) | 4194304-word by 16-bit |
| Supply Voltage | +3.3V |
| Self refresh current (Max) | 400uA |
The M5M467400/465400 and M5M467800/465800 series use 32 pin SOJ or TSOP, while the M5M465160BJ uses 50 pin SOJ or TSOP.
The maximum operating power dissipation is 360.0mW.