This document describes the features and characteristics of Fujitsu Semiconductor's flash memory products, including 0.33μm process technology, dual operation mode, single 3.0V read/write operation, compatibility with JEDEC standard commands and worldwide pinouts, and high performance.
The Fujitsu MBM29DL32XTD/BD is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V Vcc supply and do not require higher voltages for write or erase operations.
The memory features a sliding bank architecture allowing simultaneous read/write operations across two banks, zero latency between read and write cycles, and read-while-erase capabilities. It includes Embedded Erase™ and Embedded Program™ algorithms to automatically manage programming and erasing processes.
| Memory Capacity | 32M-bit (4M x 8/2M x 16) |
|---|---|
| Operating Voltage | Single 3.0 V |
| Process Technology | 0.33 um |
| Max Access Time (80ns) | 80 ns |
| Program/Erase Cycles | 100,000 cycles |
The devices operate with a single 3.0 V supply; 5.0 V and 12.0 V are not required.
Yes, the host system can program or erase in one bank while immediately reading from the other.