This data sheet provides the details of the MB84VD2218XEC-90/MB84VD2219XEC-90, including power supply voltage, maximum access time, operating temperature, package and so on
This document is a data sheet for the Fujitsu MB84VD2218XEC/EE-90 and MB84VD2219XEC/EE-90 stacked Multi-Chip Package (MCP) devices, which integrate Flash Memory and Static RAM. The product line offers 32 Mbit of flash memory paired with 4 Mbit of static RAM in a single 73-ball plastic BGA package.
Key features include simultaneous read/write operations via dual banks, zero latency between read and write cycles, and embedded algorithms for programming and erasing. The devices operate on a power supply voltage ranging from 2.7 to 3.3 V with maximum access times of 90 ns for Flash and 85 ns for SRAM.
| Power supply voltage | 2.7 to 3.3 V |
|---|---|
| Flash access time | 90 ns maximum |
| SRAM access time | 85 ns maximum |
| Operating Temperature | -25 to +85°C |
| Package type | 73-ball BGA |
| Flash capacity | 32M (x 8/x16) |
| SRAM capacity | 4M (x 8/x16) |
The maximum access time for the Flash memory is 90 ns.
Yes, it supports simultaneous Read/Write operations using a dual bank architecture.
The device supports a minimum of 100,000 write/erase cycles.