HAT2134H is a N-channel power MOSFET launched by RENESAS, featuring 4.5V gate drive, low drive current, high density mounting and low on-resistance (RDS(on) = 2.3mΩ typ. (at VGS = 10V))
The HAT2134H is a silicon N‑channel power MOSFET designed for low‑drive, high‑density applications. It features a 4.5 V gate drive capability, low on‑resistance, and a compact LFPAK package.
The document lists absolute maximum ratings, electrical characteristics such as drain current up to 60 A and on‑resistance as low as 0.023 Ω, as well as package dimensions and ordering information. Safety and handling notes are also included.
| Drain to source voltage (Vds) | 20 V |
|---|---|
| Gate to source voltage (Vgs) | +20 V |
| Drain current (Id) | 60 A |
| On‑state resistance (Rds(on)) typical | 0.023 Ω |
| Total gate charge (Qg) | 70 nC |
| Package name | LFPAK |
The maximum drain current is 60 A.
The device can be stored from –55 °C to +150 °C.
It uses the LFPAK (LFPAK) package.
Typical on‑resistance is 2.3 mΩ (0.023 Ω).