This document is about the safety instructions for the products of Renesas Technology Corp.
This document is a datasheet for the HN29V25611AT-50H, a CMOS Flash Memory with AND type multi-level memory cells. Originally manufactured by Hitachi, the semiconductor operations were transferred to Renesas Technology Corporation in April 2003; this document reflects that change while retaining original technical content.
The device features fully automatic programming and erase capabilities using a single 3.0V power supply (2.7V to 3.6V). It utilizes 2-bit per memory cell technology, offering high storage density in a 48-pin TSOP package with dimensions of 12.0 x 20.0 mm.
| Capacity | 256Mbit (2048 + 64) bytes x More than 16,057 sectors |
|---|---|
| Power Supply Voltage | 2.7 V to 3.6 V |
| Memory Cell Structure | 2 bit per memory cell |
| Package Type | 48-pin plastic TSOP (TFP-48DA) |
| Dimensions | 12.0 x 20.0 mm |
The unit of programming and erase is as small as (2048 + 64) bytes.
Yes, it includes an internal automatic program verify function and an internal automatic erase verify function.