HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR series are high-speed, low-power, and high-reliability 64K EEPROMs. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.
This document is a technical datasheet for the Renesas Technology HN58V65A series and HN58V66A series electrically erasable and programmable read-only memory (EEPROM). The devices are organized as 8192-word x 8-bit and utilize advanced MNOS memory technology and CMOS process circuitry to achieve high speed, low power consumption, and high reliability. Key features include a 64-byte page programming function for faster write operations, on-chip latches for address and data, and automatic byte or page write capabilities.
| Memory Organization | 8192-word x 8-bit |
|---|---|
| Supply Voltage Range | 2.7 to 5.5 V |
| Access Time (Max) | 100 ns at 2.7V, 70 ns at 4.5V |
| Power Dissipation (Active) | 20 mW/MHz (typ) |
| Erase/Write Cycles | 10^6 cycles |
| Data Retention | 10 years |
| Operating Temperature (AI Series) | -40 to +85°C |
| Operating Temperature (SR Series) | -20 to +85°C |
The devices are organized as 8192-word x 8-bit.
Yes, they have a 64-byte page programming function to make write operations faster.
Yes, the datasheet notes that there are also lead free products available.