This document describes the features and characteristics of HIT667, which is a low frequency power amplifier and complementary pair with HIT647.
The document is a technical specification sheet for the Renesas HIT667, a silicon NPN epitaxial transistor designed as a low-frequency power amplifier. It is part of a complementary pair with the HIT647 and is packaged in a TO-92 Mod format.
Key electrical characteristics include a collector-to-base breakdown voltage of 120V and a maximum collector current of 1.0A. The datasheet details absolute maximum ratings, electrical parameters such as DC current transfer ratio, and typical output/transfer curves.
| Collector to base voltage (Vecbo) | 120 V |
|---|---|
| Collector current (Ic) | 1.0 A |
| Collector power dissipation (Pc) | 0.9 W |
| Junction temperature (Tj) | 150 °C |
| DC current transfer ratio hfe1 | 140 to 330 |
No, this product is designed for consumer use and not for automotive.
The package name is TO-92 Mod.