REJ03G0185-0100Z is a low leakage, low zener impedance, 400mW maximum power dissipation zener diode which is ideally suited for stabilized power supply, etc. The product features a wide spectrum from 1.88V through 38.52V of zener voltage for flexible application.
The document describes the Renesas HZS-N Series of Silicon Epitaxial Planar Zener Diodes designed for use in stabilized power supply applications. Key features include low leakage, low zener impedance, and a maximum power dissipation of 400 mW. The series offers a wide spectrum of zener voltages ranging from 1.88 V through 38.52 V.
| Maximum Power Dissipation | 400 mW |
|---|---|
| Junction Temperature | 200 °C |
| Storage Temperature Range | -55 to +175 °C |
| Zener Voltage Range | 1.88 V through 38.52 V |
| Package Code | MHD |
The maximum power dissipation (Pd) for the HZS-N Series is 400 mW.
Yes, the series is suitable for 5mm-pitch high speed automatic insertion.