This document is an introduction to the HZ Series Silicon Epitaxial Planar Zener Diode, which features low leakage, low zener impedance, and a maximum power dissipation of 500mW, making it ideal for stabilized power supply applications. It offers a wide spectrum of zener voltage ranging from 1.6V to 38V, providing flexible application capabilities.
This document is a datasheet for the Renesas HZ Series Silicon Epitaxial Planar Zener Diode, specifically model REJ03G0180-0300Z. The device is designed for stabilized power supply applications, offering low leakage current, low zener impedance, and a maximum power dissipation of 500 mW. It provides a wide spectrum of zener voltages ranging from 1.6 V to 38 V.
| Power dissipation | 500 mW |
|---|---|
| Junction temperature | 175 °C |
| Storage temperature | -55 to +175 °C |
| Package Code | DO-35 |
| Zener Voltage Range | 1.6 V through 38 V |
The maximum power dissipation is 500 mW.
The zener voltage range is from 1.6 V to 38 V.
The package code is DO-35.