The document provides specifications for Toshiba's high‑efficiency diode stack (HED) silicon epitaxial devices, model numbers 20DL2CZ51A and 20FL2CZ51A. It lists the electrical characteristics, maximum ratings, and recommended operating conditions for use in switching‑type power‑supply and converter applications.
Key data include reverse‑voltage ratings, forward‑current capability, reverse‑recovery time, junction temperature range, and thermal impedance. The sheet also contains polarity markings, lot‑number coding, and a disclaimer about product reliability and usage guidelines.
| Repetitive Peak Reverse Voltage (VRRM) | 200 V (20DL2CZ51A) / 300 V (20FL2CZ51A) |
|---|---|
| Average Output Rectified Current (Ig) | 20 A |
| Ultra‑Fast Reverse‑Recovery Time (typ) | 35 ns |
| Junction Temperature Range (Tj) | -40 °C to 150 °C |
The 20DL2CZ51A is rated for 200 V and the 20FL2CZ51A for 300 V repetitive peak reverse voltage.
The typical reverse‑recovery time is 35 ns.
Both devices are rated for an average output rectified current of 20 A.