The RN2010 and RN2011 are PNP epitaxial transistors offered by Toshiba for switching, inverter, interface and driver circuits. The document lists typical applications and highlights the built‑in bias resistors that simplify circuit design.
Key electrical specifications are provided, including voltage limits, current ratings, power dissipation, temperature ranges, gain, transition frequency and capacitance. These data help designers ensure the devices operate within safe limits and meet performance requirements.
| Collector‑Base Voltage (V_CBO) | 50 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 50 V |
| Emitter‑Base Voltage (V_EBO) | -5 V |
| Collector Current (I_C) | 100 mA |
| Collector Power Dissipation (P_E) | 400 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
The RN2010 can handle a maximum collector current of 100 mA.
It can be stored from –55 °C up to 150 °C.