This document is a technical datasheet for the Toshiba 2SD1407A, an NPN silicon triple diffused type transistor. It specifies that the device is designed for power amplifier and industrial applications and is complementary to the 2SB1016A model.
The datasheet provides comprehensive electrical specifications including maximum ratings such as a collector-base voltage of 100V and a collector current of 5A. It also details DC current gain, saturation voltages, transition frequency, and includes graphical representations of the Safe Operating Area and output characteristics.
| Collector-Emitter Voltage (VcEO) | 100 V |
|---|---|
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (Ic) | 5 A |
| Base Current (Ip) | 0.5 A |
| Junction Temperature (Tj) | 150 °C |
The document states that the 2SD1407A is complementary to the 2SB1016A.
The datasheet lists Power Amplifier and Industrial Applications as the intended uses.