Toshiba SG800GXH25 Gate Turn-Off Thyristor Datasheet


Toshiba SG800GXH25 Gate Turn-Off Thyristor Datasheet - cover page
Brand
Toshiba
Document type
Datasheet
Language
English
Pages
3
File format
PDF
File size
171 KB
Published
05 June, 2012
Updated
27 June, 2012
MD5 checksum
4F80C43E72629883D395096BD73BF0E6

About this manual

This document provides a datasheet for the Toshiba SG800GXH25, a gate turn-off thyristor intended for use in inverter applications. Key maximum ratings include a repetitive peak off-state voltage of 4500 V and an RMS on-state current of 300 A.

What's inside

  • Maximum Ratings
  • Electrical Characteristics
  • Thermal Resistance
  • Application Curves

Specifications

Repetitive Peak Off-State Voltage (VDRM)4500 V
Repetitive Peak Reverse Voltage (VRRM)4000 V
RMS On-State Current (IT(RMS))300 A
Peak Turn-Off Current (ITGQM)800 A
Critical Rate of Rise of On-State Current (di/dt)200 A/us

Frequently asked questions

What is the critical rate of rise of on-state current?

The critical rate of rise of on-state current is 200 A/ us.

Download PDF (171 KB)

More Toshiba Manuals


View all Toshiba manuals →