This document provides technical specifications for the Toshiba RN2970 and RN2971, which are silicon PNP epitaxial type transistors utilizing the PCT process. These devices are specifically engineered for use in switching, inverter circuits, and interface circuits, including AND driver applications.
| Collector-Base Voltage | -50 V |
|---|---|
| Collector-Emitter Voltage | -50 V |
| Emitter-Base Voltage | -5 V |
| Collector Current | -100 mA |
| Collector Power Dissipation | 200 mW |
| Junction Temperature | 150 °C |
| Storage Temperature Range | -55~150 °C |
The device supports a maximum collector-base voltage of -50 V and a maximum collector power dissipation of 200 mW.
The minimum DC current gain (hFE) is 120 when tested at a collector-emitter voltage of -5V and a base current of -1mA.
The maximum rated junction temperature (Tj) is 150 °C.