Toshiba 2SC3182 Power Amplifier Datasheet

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Toshiba 2SC3182 Power Amplifier Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
95 KB
Published
05 June, 2012
Updated
01 October, 2023
MD5 checksum
21BC8873A0BF853840C70A02582F796B

About this manual

This document is a technical datasheet for the Toshiba 2SC3182, a complementary silicon NPN triple diffused type transistor. It is specifically recommended for use in the output stage of 70W high-fidelity audio frequency amplifiers and is designed to be paired with the 2SA1265.

What's inside

  • Features
  • Maximum Ratings
  • Electrical Characteristics
  • Safe Operating Area
  • Output Characteristics

Specifications

Collector-Emitter Voltage (Vceo)140 V
Emitter-Base Voltage (Vebo)5 V
Collector Current (Ic)10 A
Junction Temperature (Tj)150 °C
Storage Temperature Range (Tstg)-55~150 °C

Frequently asked questions

Which transistor is this complementary to?

The 2SC3182 is complementary to the 2SA1265.

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