This document is a technical datasheet for the Toshiba TC551001 series of 131,072-word by 8-bit static random access memory (SRAM) devices. The chips utilize Toshiba's CMOS Silicon gate process technology to provide high speed and low power consumption, operating from a single 5V supply.
| Memory Organization | 131,072 words by 8 bits |
|---|---|
| Power Supply Voltage | 5 V + 10% |
| Operating Current (Typ) | 5 mA/MHz |
| Minimum Cycle Time (-55) | 55 ns |
| Standby Current (Max) | 100 pA |
The typical operating current is 5 mA/MHz.
It contains 131,072 words by 8 bits.
The minimum cycle time is 55 ns.