2SA1313 is a PNP transistor produced by Toshiba. It has excellent hFE linearity and high voltage characteristics, and is suitable for audio low-power amplifiers, driver stage amplifiers and switching applications.
This document is a technical datasheet for the Toshiba 2SA1313, a silicon PNP epitaxial type transistor designed for audio frequency low power amplifier applications. It provides absolute maximum ratings, electrical characteristics, and typical performance curves under various conditions.
The datasheet specifies key parameters such as collector-emitter voltage (50 V), collector current (-500 mA), and DC current gain classifications. It also includes application circuit diagrams for driver stage amplifiers and switching applications.
| Collector-base voltage (VcBo) | -50 V |
|---|---|
| Collector-emitter voltage (VCEO) | 50 V |
| Emitter-base voltage (VEBO) | -5 V |
| Collector current (Ic) | -500 mA |
| Base current (IB) | -50 mA |
| Collector power dissipation (Po) | 200 mW |
| Junction temperature (Tj) | 150 °C |
The DC current gain (hFE) is classified into two groups: O with a minimum of 25, and Y with a minimum of 40.
The typical transition frequency (fT) at VceE = -6 V and Ic = -20 mA is 200 MHz.