SSM3K15FS is a Toshiba field-effect transistor suitable for high-speed switching and analog switching applications. It has a compact package suitable for high-density mounting. It has a low ON-resistance, with a maximum of 4.0Ω (@VGS=4V) and 7.0Ω (@VGS=2.5V).
This document is a technical datasheet for the TOSHIBA SSM3K15FS, which is a Silicon N Channel MOS Field Effect Transistor. The device features low ON-resistance (maximum 4.0 Ω at VGS = 4V) and is designed for high-speed switching applications.
| Drain-Source voltage (V DS) | 30 V |
|---|---|
| Gate-Source voltage (V GSS) | 120 V DC |
| Drain current (I D) | 100 mA |
| Channel temperature (T ch) | 150 °C |
| Drain-Source ON resistance (R DS(ON)) @ VGS=4V | 4.0 Ω max |
| Drain-Source ON resistance (R DS(ON)) @ VGS=2.5V | 7.0 Ω max |
| Input capacitance (C iss) | 7.8 pF |
The document recommends a VGS of 2.5 V or higher to turn on the product and notes that Vth can be expressed as voltage between gate and source when low operating current is 100 µA.
The maximum drain-source voltage is rated at 30 V.
The maximum drain power dissipation is 100 mW when the ambient temperature is 25°C.
A gate-source voltage of 2.5 V or higher is recommended to turn on the device.