TPC8010-H is a high-performance field effect transistor manufactured by Toshiba that is suitable for applications such as notebooks and portable equipment.
This document is a technical datasheet for the TPC8010-H, an enhancement-mode Silicon N Channel MOS Type field effect transistor. It is specifically designed for high-speed switching applications, particularly within DC-DC converters used in notebook PCs and portable equipment.
The datasheet provides comprehensive electrical characteristics, maximum ratings, and thermal data. Key features include a small gate charge of 18 nC (typical), low drain-source ON resistance of 12 mΩ (typical), and high forward transfer admittance of 11 S (typical). The device is housed in a small footprint package suitable for compact designs.
| Drain-source voltage (V_DSS) | 30 V |
|---|---|
| Gate-source voltage (V_GSS) | ±20 V DC |
| Channel temperature (T_ch) | 150 °C |
| Gate threshold voltage (V_th) | 1.1 to 2.3 V |
| Drain-source ON resistance (R_DS(ON)) | 12 mΩ (typ.) |
| Total gate charge (Q_g) | 18 nC (typ.) |
The maximum channel temperature rating is 150 °C.
Yes, the document states that this transistor is an electrostatic sensitive device and should be handled with caution.