This document describes a new type of ultra-low level MOSFET device with low gate charge and low on-resistance. This device is suitable for switching applications, improving the overall efficiency of DC/DC converters and allowing operation at higher switching frequencies.
The ISL9N303 series are N‑Channel Logic Level UltraFET trench MOSFETs rated for 30 V and 75 A. They feature low gate charge, low on‑resistance, and fast switching, making them suitable for DC/DC converters and high‑frequency switching applications.
The datasheet lists maximum ratings, thermal resistance values, typical characteristic curves, and test circuits. It also includes PSPICE and SPICE thermal models, as well as guidelines for thermal management of the TO‑220, TO‑262, and TO‑263 packages.
| Drain‑to‑Source Voltage (V_DSS) | 30 V |
|---|---|
| Continuous Drain Current (I_D) @ V_GS=10 V | 75 A |
| On‑Resistance (R_DS(on)) typ @ V_GS=4.5 V | 0.004 Ω |
| Total Gate Charge Q_g typ @ V_GS=10 V | 115 nC |
| Input Capacitance (C_iss) | 7000 pF |
| Maximum Power Dissipation (P_D) | 215 W |
| Operating Temperature Range | -55 °C to 175 °C |
| Junction‑to‑Case Thermal Resistance (RθJC) | 0.7 °C/W |
The device can handle up to 75 A continuous drain current at a gate voltage of 10 V.
The typical on‑resistance is 0.004 Ω when the gate‑source voltage is 4.5 V.
The input capacitance (C_iss) is specified as 7000 pF.
Thermal resistance values are provided in the datasheet; for the TO‑263 package the junction‑to‑case resistance is 0.7 °C/W and junction‑to‑ambient values depend on copper area as shown in Figure 21.