This document presents the absolute maximum ratings and electrical characteristics of the KSE350 PNP epitaxial silicon transistor. The transistor features a high collector-emitter breakdown voltage and is suitable for high voltage general purpose applications and transformers. It is a complement to the KSE340.
The KSE350 is a high‑voltage PNP epitaxial silicon transistor intended for general purpose applications such as transformer circuits. The datasheet lists absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical package dimensions.
Additional sections cover trademark information, a disclaimer, life‑support policy, and product status definitions, indicating that the part is a full‑production device with final specifications.
| Collector‑Base Voltage (V_CBO) | 300 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 300 V |
| Emitter‑Base Voltage (V_EBO) | -5 V |
| Collector Current (I_C) | 500 mA |
| Junction Temperature (T_J) | 150 °C |
| Storage Temperature Range | -65 °C to 150 °C |
The maximum collector‑emitter voltage is 300 V.
The device can be stored between –65 °C and +150 °C.
No, Fairchild does not authorize its use in life‑support devices without written approval.