FGH80N60FD2 is a 600V, 80A field stop IGBT. It features high current capability, low saturation voltage, high input impedance, and fast switching. It is suitable for induction heating applications.
The FGH80N60FD2 is a 600 V, 80 A field‑stop IGBT designed for induction‑heating applications where low conduction and switching losses are critical. It features high current capability, low saturation voltage, high input impedance and fast switching, and is RoHS compliant.
Key specifications include a collector‑emitter voltage rating of 600 V, a continuous collector current of 80 A (25 °C), a pulsed current rating of 160 A, and a maximum power dissipation of 290 W at 25 °C. Thermal resistance values are 0.43 °C/W (junction‑to‑case) for the IGBT and 1.45 °C/W for the diode, with a TO‑247AB package.
| Collector‑Emitter Voltage (Vces) | 600 V |
|---|---|
| Gate‑Emitter Voltage (Vges) | +20 V |
| Continuous Collector Current (Io) @ 26 °C | 80 A |
| Pulsed Collector Current (Iom) | 160 A |
| Maximum Power Dissipation @ 25 °C | 290 W |
| Total Gate Charge (Qg) | 120 nC |
The device is rated for a collector‑emitter voltage of 600 V.
The maximum continuous collector current is 80 A at a junction temperature of 26 °C.
Yes, the datasheet states the device is RoHS compliant.