This document describes the features and characteristics of the FDP18N20F / FDPF18N20F N-Channel MOSFET products produced by Fairchild Semiconductor Corporation, including 200V voltage, 18A current, 0.145Ω resistance, low gate charge, fast switching speed, 100% avalanche tested, and RoHS compliance.
The Fairchild FDP18N20F and FDPF18N20F are N‑Channel enhancement mode power MOSFETs designed for high‑efficiency switching power supplies and power factor correction. They feature low gate charge, low on‑resistance, and are RoHS compliant.
The document provides maximum ratings, detailed electrical characteristics, typical performance curves, test circuit diagrams, and mechanical dimensions for the TO‑220 and TO‑220F packages.
| Drain‑Source Voltage (VDS) | 200 V |
|---|---|
| Gate‑Source Voltage (VGS) | +30 V |
| Continuous Drain Current (ID) @ 25°C | 18 A |
| Pulsed Drain Current (ID) (250 µs) | 72 A |
| Input Capacitance (Ciss) typ | 885 pF |
The maximum continuous drain current is 18 A at 25 °C.
It is rated for 200 V drain‑source voltage and +30 V gate‑source voltage.